| PART |
Description |
Maker |
| UPA1730G-E1 UPA1730TP-E2 UPA1730TP-E1 UPA1730G-E2 |
Pch enhancement type power MOS FET
|
NEC
|
| UPA1916 UPA1916TE UPA1916TE-T2 UPA1916TE-T1 |
Pch enhancement-type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1917TE UPA1917 UPA1917TE-T2 UPA1917TE-T1 |
Pch enhancement-type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1815GR-9JG-E1 UPA1815GR-9JG-E2 |
Pch enhancement type MOS FET
|
NEC
|
| UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开
10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp.
NEC, Corp.
Lattice Semiconductor, Corp.
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z |
N-channel enhancement type DMOS
MOS Field Effect Transistors
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| UPA1792G-E1 UPA1792G-E2 |
N-ch P-ch enhancement type power MOS FET
|
NEC
|
| FAN2502 FAN2503S285 FAN2502S27 FAN2502S25 FAN2503S |
150 mA CMOS LDO Regulators
Pch Power MOSFET; ; Package: PS-8; Number Of Pins: 8; R DS On (Ω): (max 0.09) (max 0.041) (max 0.03); I_S (A): (max -5.6)
Pch Power MOSFET; Surface Mount Type: Y; Package: SOP-8; Application Scope: mobile; R DS On (Ω): (max 0.03) (max 0.02); I_S (A): (max -10)
Pch Power MOSFET; Surface Mount Type: N; Package: VS-6; R DS On (Ω): (max 0.09) (max 0.055) (max 0.035); I_S (A): (max -5.5)
Pch Power MOSFET; Surface Mount Type: Y; Package: VS-8; Application Scope: mobile; R DS On (Ω): (max 0.3) (max 0.16) (max 0.11); I_S (A): (max -2.7)
|
Fairchild Semiconductor
|
| FX30KMJ-3 FX30KMJ-3-A8 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
